New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2019
ISSN: 0038-1101
DOI: 10.1016/j.sse.2019.03.046